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Penn State Researchers Create World’s First 2D Computer

In a groundbreaking development, a team of researchers at Penn State University has achieved a major milestone in the field of computer technology by creating the world’s first 2D computer that does not rely on traditional silicon materials. This innovative computer is based on two-dimensional (2D) materials that are just one atom thick and maintain their properties at that scale, offering the potential for thinner, faster, and more energy-efficient electronics.

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Published in Nature, this pioneering work represents a significant departure from conventional silicon-based technology. The researchers successfully constructed a complementary metal-oxide semiconductor (CMOS) computer using two distinct 2D materials: molybdenum disulfide for n-type transistors and tungsten diselenide for p-type transistors. These materials were crucial in developing the transistors required to control electric current flow in the CMOS computer.

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According to Saptarshi Das, the lead researcher and an engineering professor at Penn State, while silicon has been instrumental in driving electronic advancements for decades, its limitations become apparent as devices shrink in size. In contrast, 2D materials offer exceptional electronic properties at atomic thickness, presenting a promising avenue for future electronic innovations.

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The CMOS technology employed in the newly developed computer necessitated the collaboration of both n-type and p-type semiconductors to achieve high performance with low power consumption. Previous studies had demonstrated small circuits based on 2D materials, but the challenge of scaling to complex functional computers had remained unmet until now.

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Using a fabrication process called metal-organic chemical vapor deposition (MOCVD), the research team grew large sheets of molybdenum disulfide and tungsten diselenide to fabricate over 1,000 transistors of each type. By precisely adjusting the fabrication process, they were able to fine-tune the threshold voltages of both transistor types, enabling the creation of fully operational CMOS logic circuits.

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The 2D CMOS computer developed by the team operates at low-supply voltages with minimal power consumption and can perform basic logic operations at frequencies up to 25 kilohertz. Although its operating frequency may be lower compared to conventional silicon circuits, the computer shows promise in executing simple logic functions.

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Subir Ghosh, the first author of the study, highlighted the significance of their computational model, which projects the performance of the 2D CMOS computer and compares it to state-of-the-art silicon technology. While further optimization is needed, this achievement marks a significant advancement in leveraging 2D materials for electronic applications.

Despite the need for continued development to broaden the use of 2D CMOS computers, the researchers are optimistic about the progress made in this field. They emphasized the relatively recent emergence of 2D materials research compared to the long-standing history of silicon technology, indicating a promising trajectory for future electronic innovations.

The team acknowledged the support of the 2D Crystal Consortium Materials Innovation Platform (2DCC-MIP) at Penn State in facilitating their research. With federal funding playing a crucial role in supporting such groundbreaking research endeavors, the implications of potential funding cuts on future technological advancements are a matter of concern.

As researchers at Penn State continue to address real-world challenges through innovative research, the quest for technological advancements in computer technology remains at the forefront of scientific exploration. This groundbreaking achievement in developing a 2D CMOS computer opens up new possibilities for the future of electronics, signaling a shift towards more efficient and advanced electronic devices.

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